產(chǎn)品參數(shù)產(chǎn)品說明PDF(1)
• JEDEC standard 1.2V (1.14V~1.26V)
• VDDQ = 1.2V (1.14V~1.26V)
• VPP = 2.5V (2.375V~2.75V)
• 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin,
1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin,
1333MHz fCKfor 2666Mb/sec/pin
• 8 Banks (2 Bank Groups)
• Programmable CAS Latency(posted CAS):
10,11,12,13,14,15,16,17,18,19,20
• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600) ,
10,12 (DDR4-1866) ,11,14 (DDR4-2133) ,12,16 (DDR4-2400) and
14,18 (DDR4- 2666)
• 8-bit pre-fetch
• Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read
or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85?C, 3.9us at
85?C < TCASE < 95 ?C
• Support Industrial Temp ( -40???95?C )
- tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
- tREFI 3.9us at 85 °C < TCASE ≤ 95°C
• Asynchronous Reset
• Package : 96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
• CRC(Cyclic Redundancy Check) for Read/Write data security
• Command address parity check
• DBI(Data Bus Inversion)
• Gear down mode
• POD (Pseudo Open Drain) interface for data input/output
• Internal VREF for data inputs
• External VPP for DRAM Activating Power
遠景 使命 價值
使命 :
· 運營各種存儲芯片、存儲產(chǎn)品的獨立分銷渠道商
遠景 :
· 分布于各地靈活的、可不斷提升的的運作與實施網(wǎng)絡(luò)
· 集中式信息管理， 包括產(chǎn)品，定價和 技術(shù)
· 注重成果和以業(yè)績?yōu)橥苿恿?/span>
價值 :
· 價好回購快 低成本，高品質(zhì)，富有靈活性
· 快速交易
本公司秉著“面向世界，放眼未來,服務(wù)至上"的經(jīng)營理論。歡迎咨詢！
現(xiàn)貨供應(yīng)，原裝
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