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北京羲和陽(yáng)光科技發(fā)展有限公司
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非接觸電阻率厚度測(cè)試儀
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產(chǎn)品簡(jiǎn)介
產(chǎn)品介紹
電阻率厚度測(cè)試儀
產(chǎn)品型號(hào)：進(jìn)口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connector and a PC.
功能特點(diǎn)
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from top and one from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledge and can be moved simultaneously equidistant to
the center by means of a manually moved lever.
Before and behind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer forms or misalignments. To ensure safe start and finish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement values and to
arm/disarm measurements.
技術(shù)參數(shù)
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm （1 scan only）
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm （thk.=240μm）
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
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